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Saturday, May 2, 2020 | History

4 edition of Materials and electronics for high-speed and infrared detectors found in the catalog.

Materials and electronics for high-speed and infrared detectors

19-20 and 23 July 1999, Denver, Colorado

by

  • 58 Want to read
  • 30 Currently reading

Published by SPIE in Bellingham, Wash., USA .
Written in English

    Subjects:
  • Infrared detectors -- Materials -- Congresses.,
  • Infrared technology -- Congresses.

  • Edition Notes

    Includes bibliographical references and index.

    StatementStephen M. Goodnick ... [et al.], chairs/editors ; sponsored ... by SPIE--the International Society for Optical Engineering.
    GenreCongresses.
    SeriesSPIE proceedings series ;, v. 3794, Proceedings of SPIE--the International Society for Optical Engineering ;, v. 3794.
    ContributionsGoodnick, Stephen M. 1955-, Society of Photo-optical Instrumentation Engineers.
    Classifications
    LC ClassificationsTA1570 .M349 1999
    The Physical Object
    Paginationvii, 170 p. :
    Number of Pages170
    ID Numbers
    Open LibraryOL6897654M
    ISBN 100819432806
    LC Control Number00700142
    OCLC/WorldCa42803325


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Materials and electronics for high-speed and infrared detectors Download PDF EPUB FB2

Materials and Electronics for High-Speed and Infrared Detectors: Proceedings of Spie and 23 July Denver, Colorado (Proceedings of Spie--The Society for Optical Engineering, V.

) [Goodnick, Stephen M., Kailey, W. S., Longshore, Randolph E., Yong-Hang, Zhang] on *FREE* shipping on qualifying offers. Materials and Electronics for High-Speed and Infrared Detectors Author: Stephen M. Goodnick. Get this from a library. Materials and electronics for high-speed and infrared detectors: and 23 JulyDenver, Colorado.

[Stephen M Goodnick; Society of Photo-optical Instrumentation Engineers.;]. Get this from a library. Materials and electronics for high-speed and infrared detectors: and 23 JulyDenver, Colorado.

[Stephen M Goodnick; Society of Photo-optical Instrumentation Engineers.; SPIE Digital Library.;]. We supply a wide range of standard and custom infrared (IR) detectors, from Vigo Systems, with emphasis on room temperature and thermo-electrically (TE) cooled devices.

Our IR detectors are robust, affordable and in volume production. Photodetectors: Materials, Devices and Applications discusses the devices that convert light to electrical signals, key components in communication, computation, and imaging systems. In recent years, there has been significant improvement in photodetector performance, and this important book reviews some of the key advances in the field.

Li, W. Gao, in Developments in High Temperature Corrosion and Protection of Materials, Introduction. Electronic materials are the materials used in electrical industries, electronics and microelectronics, and the substances for the building up of integrated circuits, circuit boards, packaging materials, communication cables, optical fibres, displays, and various controlling and.

PROCEEDINGS VOLUME Materials for Infrared Detectors III. Editor(s): Randolph E. Longshore; Sivalingam Sivananthan *This item is only available on the SPIE Digital Library.

Volume Details. Volume Number: Date Published: 8 December Table of Contents. Photodetectors: Devices, Circuits, and Applications is a useful reference for working engineers and an ideal sourcebook for university-level courses.

About the Author SILVANO DONATI has been a full professor of Optoelectronics at the University of Pavia, Italy, since Cited by: FLIR’s Repair and Replacement Policy is a reflection of our commitment to provide timely and comprehensive support and repair services.

AbstractInfrared photodetectors (IRPDs) have become important devices in various applications such as night vision, military missile tracking, medical imaging, industry defect imaging, environmental sensing, and exoplanet exploration.

Mature semiconductor technologies such as mercury cadmium telluride and III–V material-based photodetectors have been dominating the by: materials.

During the s, IR detectors were built using single-element- and high speed of response. Since it is a majority carrier device, Figure Comparison of the D of various. This paper presents a method for detecting high-speed incoming targets by the fusion of spatial and temporal detectors to achieve a high detection rate for an active protection system (APS).

The incoming targets have different image velocities according to the target-camera geometry. Therefore, single-target detector-based approaches, such as a 1D temporal filter, 2D spatial filter and 3D Cited by: Infrared Detectors An infrared detector is a device used to detect radiation from the infrared region.

It may be a thermal detector, such as a bolometer, thermocouple or Golay cell, or it. Semiconductor materials (InP, GaAs, GaN, MCT, Si). Devices (ultra high speed electronic devices and circuits). MEMS. Infrared detectors. Fundamental of Infrared Detector Materials. high-speed devices high performance doped silicon detectors are desired to allow for the integration of detectors and silicon electronics on the.

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For many years, high-speed visible cameras offered the ability to stop motion on fast-moving objects and provided unique insight through slow-motion playback for.

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It File Size: KB. The reasons for high-speed detection are varied, but often the motivation is either high sample throughput or short signal life. Detection at high speed often means that the total number of detected photons is very small. Basic requirements include a sensitive detector and electronics that do not add to signal noise.

Detectors based on silicon and germanium have found the widest application compared with extrinsic photodetectors on other materials. Increasing interest in extrinsic detectors has been observed due to the creation of multi-element FPAs for application in space and ground-based IR Author: Chee Leong Tan.

detectors. Still, microbolometers react to incident radiant energy and are much slower and less sensitive than quantum detectors. Quantum detectors are made from materials such as InSb, InGaAs, PtSi, HgCdTe (MCT), and layered GaAs/AlGaAs for QWIP (Quantum Well Infrared Photon) detectors.

The operation of a quantumFile Size: 1MB. International Journal of High Speed Electronics and Systems, (Vol. 9, No. 4) Michael Stroscio and Mitra Dutta, Editors, World Scientific Publishers, Inc., published [More About This Book] "Novel InTlSb Infrared Detectors" chapter 8 in Long Wavelength Infrared Detectors M.

Razeghi, Editor, Gordon and Breach Publishers, Inc., published Semiconductor materials are nominally small band gap defining property of a semiconductor material is that it can be doped with impurities that alter its electronic properties in a controllable way. Because of their application in the computer and photovoltaic industry—in devices such as transistors, lasers, and solar cells—the search for new semiconductor materials and the.

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Hg 1-x Cd x Te (MCT) is the most widely used infrared (IR) detector material in military applications, compared to other IR detector materials, primarily because of two key features: it is a direct energy band gap semiconductor and its band gap can be engineered by varying the Cd composition to cover a broad range of wavelengths.

The direct Cited by: Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films.

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A Note on the Use of High-Speed Infrared Detectors for the Measurement of Temperature Fields at the Vicinity of Dynamically Growing Cracks in Steel Alan T. Zehnder California Institute of Technology, Pasadena, CA Cited by: 3.

Nanostructured Materials and Architectures for Advanced Infrared Photodetection Fuwei Zhuge, Zhi Zheng, Peng Luo, Liang Lv, Yu Huang, Huiqiao Li, and Tianyou Zhai* DOI: /admt absorb photons with wavelengths less than µm, being transparent to most of the infrared spectrum.[2,3] The exploration of alternative infrared Cited by: Specialist Infrared Detectors.

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Objective of this report is to review infrared (IR) detectors. Evolution of IR technology has been largely synonymous to advances in IR detectors. Various types of detectors, formats and materials interlaced with their applications have been studied.

Fundamentals of IR detectors along with emerging technologies like uncooledFile Size: KB. Hg 1−x Cd x Te or mercury cadmium telluride (also cadmium mercury telluride, MCT, MerCad Telluride, MerCadTel, MerCaT or CMT) is an chemical compound of cadmium telluride (CdTe) and mercury telluride (HgTe) with a tunable bandgap spanning the shortwave infrared to the very long wave infrared regions.

The amount of cadmium (Cd) in the alloy can be chosen so as to tune the optical absorption. intensity of the incident light. Photoconductive detectors are fabricated from semiconductor materials such as silicon.

•Photovoltaic. Such a detector contains a junction in a semiconductor material between a region where the conductivity is due to electrons and a region where the conductivity is due to holes (a so-called pnjunction).

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